Exciting New Capabilities

• Double seals and conflat flanges to significantly reduce N2 contamination.

• Supercharged Deposition Tool with atmospheric plasma

• PPM UHP - Ultra High Purity 

• PPB Nitrogen leak purity implemented with differentially pumped O rings and Conflat Flange on all seals (compare with O rings on prior systems)

• Higher power option (10kW) for larger area/higher growth rate processes.

• 6-600 Torr pressure range for stable, high growth-rate,single crystal processes.

• Advanced process control and monitoring including internet access to system control functions.

• Flexible fixturing with enhanced throughput for seed substrate processes.

• Modern software includes advanced (trailing) interlocks and web/mobile access to system data and control

• Integrated ergonomic single cabinet design for easy operation and service access.

Useful Features

• Bias Enhanced Nucleation (BEN) for heteroepitaxy.
  Scientific Report - Nature.com

• 100mm (4") diameter wafer heater providing +-10% uniformity microcrystalline thin diamond films

• Temperature controlled Translation Stage for large single crystal growth

• Plasma views through angled 70mm CF windows

• No line of sight between quartz microwave
  window and plasma. This reduces silicon
  contamination from the window - a common
  contamination due to atomic hydrogen
  reaction with quartz silicon dioxide.

• Stable plasma for wide range off pressure, power and substrate geometry

• Integrated Helium leak testing port 

• Power upgradeable (retrofitted to existing systems) up to 15KW

Breakthrough Results

• White Diamond Tube: 5mm ID, 2 cm long

• Advanced (trailing) interlocks

• 24/7 data logging all systems parameters and user actions

• Process for DEF Color VS1 clarity 0.5-5ct single crystal gems

• Polycrystalline and Single Crystal Detectors



• World Class Electronic Performance